T25 BJT

T25 T25
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T25 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: T25
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 80 W
  • Maximum Collector-Base Voltage: 450 V
  • Maximum Collector-Emitter Voltage: 400 V
  • Maximum Emitter-Base Voltage: 7 V
  • Maximum Collector Current: 10 A
  • Forward Current Transfer Ratio (hFE Value): 30
  • Package: TO3PN
  • Noise Figure: -