TIP3055HVF BJT
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TIP3055HVF BJT Datasheet
- Type of Transistor: BJT
- Type Designator: TIP3055HVF
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 60 W
- Maximum Collector-Emitter Voltage: 120 V
- Maximum Collector Current: 15 A
- Transition Frequency: 2.5 MHz
- Forward Current Transfer Ratio (hFE Value): 5
- Package: TO-3P
- Noise Figure: -