TIP33AF BJT

TIP33AF TIP33AF
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TIP33AF BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: TIP33AF
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 80 W
  • Maximum Collector-Base Voltage: 60 V
  • Maximum Collector-Emitter Voltage: 60 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 10 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 3 MHz
  • Forward Current Transfer Ratio (hFE Value): 20
  • Package: TO-3P
  • Noise Figure: -

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