TT2076 BJT

TT2076 TT2076

TT2076 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: TT2076
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 65 W
  • Maximum Collector-Base Voltage: 1500 V
  • Maximum Collector-Emitter Voltage: 800 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 8 A
  • Maximum Operating Junction Temperature: 150 °C
  • Forward Current Transfer Ratio (hFE Value): 5
  • Package: TO-3PMLH
  • Noise Figure: -