TT2190LS BJT
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TT2190LS BJT Datasheet
- Type of Transistor: BJT
- Type Designator: TT2190LS
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 35 W
- Maximum Collector-Base Voltage: 1500 V
- Maximum Collector-Emitter Voltage: 800 V
- Maximum Emitter-Base Voltage: 6 V
- Maximum Collector Current: 8 A
- Maximum Operating Junction Temperature: 150 °C
- Forward Current Transfer Ratio (hFE Value): 10
- Package: TO-220FI
- Noise Figure: -