10N50F1D IGBT

10N50F1D 10N50F1D

10N50F1D IGBT Datasheet

  • Type of Transistor: IGBT
  • Type Designator: 10N50F1D
  • Type of IGBT Channel: N-Channel
  • Maximum Collector Power Dissipation: 75W
  • Maximum Collector-Emitter Voltage: 500V
  • Maximum Gate-Emitter Voltage: 20V
  • Collector-Emitter saturation Voltage: 2.5V
  • Maximum Collector Current: 12A
  • Maximum Operating Junction Temperature: 150
  • Rise Time: 45
  • Package: TO220

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