12N60C3D IGBT


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12N60C3D IGBT Datasheet
- Type of Transistor: IGBT
- Type Designator: 12N60C3D
- Type of IGBT Channel: N-Channel
- Maximum Collector Power Dissipation: 104W
- Maximum Collector-Emitter Voltage: 600V
- Maximum Gate-Emitter Voltage: 20V
- Collector-Emitter saturation Voltage: 1.65V
- Maximum Collector Current: 24A
- Maximum Operating Junction Temperature: 150
- Rise Time: 28
- Package: TO220AB