12N60C3D 12N60C3D

12N60C3D IGBT Datasheet

  • Type of Transistor: IGBT
  • Type Designator: 12N60C3D
  • Type of IGBT Channel: N-Channel
  • Maximum Collector Power Dissipation: 104W
  • Maximum Collector-Emitter Voltage: 600V
  • Maximum Gate-Emitter Voltage: 20V
  • Collector-Emitter saturation Voltage: 1.65V
  • Maximum Collector Current: 24A
  • Maximum Operating Junction Temperature: 150
  • Rise Time: 28
  • Package: TO220AB

Top 12N60C3D Equivalent Transistors