1MB08-120 IGBT

1MB08-120 IGBT Datasheet

  • Type of Transistor: IGBT
  • Type Designator: 1MB08-120
  • Type of IGBT Channel: N-Channel
  • Maximum Collector Power Dissipation: 115W
  • Maximum Collector-Emitter Voltage: 1200V
  • Maximum Gate-Emitter Voltage: 20V
  • Collector-Emitter saturation Voltage: 3.5V
  • Maximum Collector Current: 13A
  • Maximum Operating Junction Temperature: 150
  • Rise Time: 1200
  • Package: TO3P