1MBH25-120 IGBT
Sponsored links
TransistorData.com is not an official representative or the creator of the IGBT 1MBH25-120 Transistor. Copyrighted materials belong to their respective owners. Please Note: Users can download the official 1MBH25-120 transistor datasheet in PDF, pin diagram, pnp pinout circuit and equivalent transistor data.
Sponsored links
1MBH25-120 IGBT Datasheet
- Type of Transistor: IGBT
- Type Designator: 1MBH25-120
- Type of IGBT Channel: N-Channel
- Maximum Collector Power Dissipation: 310W
- Maximum Collector-Emitter Voltage: 1200V
- Maximum Gate-Emitter Voltage: 20V
- Collector-Emitter saturation Voltage: 3.5V
- Maximum Collector Current: 38A
- Maximum Operating Junction Temperature: 150
- Rise Time: 1200
- Package: TO3PL