BSM50GD120DN2E3226 IGBT
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BSM50GD120DN2E3226 IGBT Datasheet
- Type of Transistor: IGBT
- Type Designator: BSM50GD120DN2E3226
- Type of IGBT Channel: N-Channel
- Maximum Collector Power Dissipation: 350
- Maximum Collector-Emitter Voltage: 1200
- Maximum Gate-Emitter Voltage: 20
- Collector-Emitter saturation Voltage: 3
- Maximum Collector Current: 50
- Maximum Operating Junction Temperature: 150
- Collector Capacitance: 500
- Rise Time: 56
- Package: MODULE