GT15Q101 IGBT
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GT15Q101 IGBT Datasheet
- Type of Transistor: IGBT
- Type Designator: GT15Q101
- Type of IGBT Channel: N-Channel
- Maximum Collector Power Dissipation: 150W
- Maximum Collector-Emitter Voltage: 1200V
- Collector-Emitter saturation Voltage: 4V
- Maximum Collector Current: 15A
- Maximum Operating Junction Temperature: 150
- Rise Time: 500
- Package: TOP3