GT25Q101 IGBT
Sponsored links
TransistorData.com is not an official representative or the creator of the IGBT GT25Q101 Transistor. Copyrighted materials belong to their respective owners. Please Note: Users can download the official GT25Q101 transistor datasheet in PDF, pin diagram, pnp pinout circuit and equivalent transistor data.
Sponsored links
GT25Q101 IGBT Datasheet
- Type of Transistor: IGBT
- Type Designator: GT25Q101
- Type of IGBT Channel: N-Channel
- Maximum Collector Power Dissipation: 200W
- Maximum Collector-Emitter Voltage: 1200V
- Collector-Emitter saturation Voltage: 4V
- Maximum Collector Current: 25A
- Maximum Operating Junction Temperature: 150
- Rise Time: 500
- Package: TO264