GT25Q101 IGBT

GT25Q101 IGBT Datasheet

  • Type of Transistor: IGBT
  • Type Designator: GT25Q101
  • Type of IGBT Channel: N-Channel
  • Maximum Collector Power Dissipation: 200W
  • Maximum Collector-Emitter Voltage: 1200V
  • Collector-Emitter saturation Voltage: 4V
  • Maximum Collector Current: 25A
  • Maximum Operating Junction Temperature: 150
  • Rise Time: 500
  • Package: TO264

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