GT60M303 IGBT

GT60M303 GT60M303
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GT60M303 IGBT Datasheet

  • Type of Transistor: IGBT
  • Type Designator: GT60M303
  • Type of IGBT Channel: N-Channel
  • Maximum Collector-Emitter Voltage: 900V
  • Maximum Gate-Emitter Voltage: 15V
  • Collector-Emitter saturation Voltage: 2.7V
  • Maximum Collector Current: 60A
  • Maximum Operating Junction Temperature: 150
  • Rise Time: 400
  • Package: TO264

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