GT60N321 IGBT
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GT60N321 IGBT Datasheet
- Type of Transistor: IGBT
- Type Designator: GT60N321
- Type of IGBT Channel: N-Channel
- Maximum Collector Power Dissipation: 170
- Maximum Collector-Emitter Voltage: 1000
- Maximum Gate-Emitter Voltage: 25
- Collector-Emitter saturation Voltage: 1.6
- Maximum Collector Current: 60
- Maximum Operating Junction Temperature: 150
- Rise Time: 230
- Package: 2-21F2C