KGF30N60KDA IGBT

KGF30N60KDA KGF30N60KDA

KGF30N60KDA IGBT Datasheet

  • Type of Transistor: IGBT
  • Type Designator: KGF30N60KDA
  • Type of IGBT Channel: N-Channel
  • Maximum Collector Power Dissipation: 178
  • Maximum Collector-Emitter Voltage: 600
  • Maximum Gate-Emitter Voltage: 20
  • Collector-Emitter saturation Voltage: 1.65
  • Maximum Collector Current: 60
  • Maximum Operating Junction Temperature: 150
  • Collector Capacitance: 160
  • Rise Time: 30
  • Package: TO247