KGH15N120NDA IGBT

KGH15N120NDA KGH15N120NDA

KGH15N120NDA IGBT Datasheet

  • Type of Transistor: IGBT
  • Type Designator: KGH15N120NDA
  • Type of IGBT Channel: N-Channel
  • Maximum Collector Power Dissipation: 200W
  • Maximum Collector-Emitter Voltage: 1200V
  • Maximum Gate-Emitter Voltage: 20V
  • Collector-Emitter saturation Voltage: 2.2V
  • Maximum Collector Current: 24A
  • Maximum Operating Junction Temperature: 150
  • Collector Capacitance: 140pF
  • Rise Time: 50
  • Package: TO3P(N)E

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