KGT12N120NDH IGBT

KGT12N120NDH KGT12N120NDH

KGT12N120NDH IGBT Datasheet

  • Type of Transistor: IGBT
  • Type Designator: KGT12N120NDH
  • Type of IGBT Channel: N-Channel
  • Maximum Collector Power Dissipation: 176W
  • Maximum Collector-Emitter Voltage: 1200V
  • Maximum Gate-Emitter Voltage: 20V
  • Collector-Emitter saturation Voltage: 2V
  • Maximum Collector Current: 24A
  • Maximum Operating Junction Temperature: 150
  • Collector Capacitance: 50pF
  • Rise Time: 18
  • Package: TO3P(N)E