KGT15N120NDH IGBT

KGT15N120NDH KGT15N120NDH

KGT15N120NDH IGBT Datasheet

  • Type of Transistor: IGBT
  • Type Designator: KGT15N120NDH
  • Type of IGBT Channel: N-Channel
  • Maximum Collector Power Dissipation: 190W
  • Maximum Collector-Emitter Voltage: 1200V
  • Maximum Gate-Emitter Voltage: 20V
  • Collector-Emitter saturation Voltage: 1.85V
  • Maximum Collector Current: 30A
  • Maximum Operating Junction Temperature: 150
  • Collector Capacitance: 60pF
  • Rise Time: 30
  • Package: TO3P(N)E