KGT15N120NDS IGBT

KGT15N120NDS KGT15N120NDS

KGT15N120NDS IGBT Datasheet

  • Type of Transistor: IGBT
  • Type Designator: KGT15N120NDS
  • Type of IGBT Channel: N-Channel
  • Maximum Collector Power Dissipation: 176
  • Maximum Collector-Emitter Voltage: 1200
  • Maximum Gate-Emitter Voltage: 20
  • Collector-Emitter saturation Voltage: 1.98
  • Maximum Collector Current: 30
  • Maximum Operating Junction Temperature: 150
  • Collector Capacitance: 50
  • Rise Time: 30
  • Package: TO3P