KGT30N120NDH IGBT

KGT30N120NDH KGT30N120NDH
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KGT30N120NDH IGBT Datasheet

  • Type of Transistor: IGBT
  • Type Designator: KGT30N120NDH
  • Type of IGBT Channel: N-Channel
  • Maximum Collector Power Dissipation: 310W
  • Maximum Collector-Emitter Voltage: 1200V
  • Maximum Gate-Emitter Voltage: 20V
  • Collector-Emitter saturation Voltage: 1.95V
  • Maximum Collector Current: 50A
  • Maximum Operating Junction Temperature: 150
  • Collector Capacitance: 100pF
  • Rise Time: 45
  • Package: TO247

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