KGT30N135KDH IGBT

KGT30N135KDH KGT30N135KDH

KGT30N135KDH IGBT Datasheet

  • Type of Transistor: IGBT
  • Type Designator: KGT30N135KDH
  • Type of IGBT Channel: N-Channel
  • Maximum Collector Power Dissipation: 250
  • Maximum Collector-Emitter Voltage: 1350
  • Maximum Gate-Emitter Voltage: 20
  • Collector-Emitter saturation Voltage: 1.9
  • Maximum Collector Current: 60
  • Maximum Operating Junction Temperature: 150
  • Collector Capacitance: 120
  • Rise Time: 30
  • Package: TO247