KGT30N60KDA IGBT

KGT30N60KDA KGT30N60KDA

KGT30N60KDA IGBT Datasheet

  • Type of Transistor: IGBT
  • Type Designator: KGT30N60KDA
  • Type of IGBT Channel: N-Channel
  • Maximum Collector Power Dissipation: 208W
  • Maximum Collector-Emitter Voltage: 600V
  • Maximum Gate-Emitter Voltage: 20V
  • Collector-Emitter saturation Voltage: 1.8V
  • Maximum Collector Current: 60A
  • Maximum Operating Junction Temperature: 150
  • Collector Capacitance: 200pF
  • Rise Time: 30
  • Package: TO247