KP810B IGBT

KP810B IGBT Datasheet

  • Type of Transistor: IGBT
  • Type Designator: KP810B
  • Type of IGBT Channel: N-Channel
  • Maximum Collector Power Dissipation: 50W
  • Maximum Collector-Emitter Voltage: 1300V
  • Collector-Emitter saturation Voltage: 5V
  • Maximum Collector Current: 7A
  • Maximum Operating Junction Temperature: 175
  • Rise Time: 200
  • Package: TO218

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