KP810V IGBT
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KP810V IGBT Datasheet
- Type of Transistor: IGBT
- Type Designator: KP810V
- Type of IGBT Channel: N-Channel
- Maximum Collector Power Dissipation: 50W
- Maximum Collector-Emitter Voltage: 1100V
- Collector-Emitter saturation Voltage: 5V
- Maximum Collector Current: 5A
- Maximum Operating Junction Temperature: 175
- Rise Time: 200
- Package: TO218