MGP11N60E IGBT

MGP11N60E MGP11N60E

MGP11N60E IGBT Datasheet

  • Type of Transistor: IGBT
  • Type Designator: MGP11N60E
  • Type of IGBT Channel: N-Channel
  • Maximum Collector Power Dissipation: 96W
  • Maximum Collector-Emitter Voltage: 600V
  • Maximum Gate-Emitter Voltage: 20V
  • Collector-Emitter saturation Voltage: 2V
  • Maximum Collector Current: 11A
  • Maximum Operating Junction Temperature: 150
  • Collector Capacitance: 779pF
  • Rise Time: 46
  • Package: TO220