MGP11N60ED IGBT

MGP11N60ED MGP11N60ED

MGP11N60ED IGBT Datasheet

  • Type of Transistor: IGBT
  • Type Designator: MGP11N60ED
  • Type of IGBT Channel: N-Channel
  • Maximum Collector Power Dissipation: 96W
  • Maximum Collector-Emitter Voltage: 600V
  • Collector-Emitter saturation Voltage: 2V
  • Maximum Collector Current: 11A
  • Maximum Operating Junction Temperature: 150
  • Rise Time: 10000
  • Package: TO220