MGP4N60ED IGBT

MGP4N60ED MGP4N60ED

MGP4N60ED IGBT Datasheet

  • Type of Transistor: IGBT
  • Type Designator: MGP4N60ED
  • Type of IGBT Channel: N-Channel
  • Maximum Collector Power Dissipation: 62.5W
  • Maximum Collector-Emitter Voltage: 600V
  • Collector-Emitter saturation Voltage: 2V
  • Maximum Collector Current: 4A
  • Maximum Operating Junction Temperature: 150
  • Rise Time: 10000
  • Package: TO220