MGS05N60D IGBT

MGS05N60D MGS05N60D

MGS05N60D IGBT Datasheet

  • Type of Transistor: IGBT
  • Type Designator: MGS05N60D
  • Type of IGBT Channel: N-Channel
  • Maximum Collector Power Dissipation: 1W
  • Maximum Collector-Emitter Voltage: 600V
  • Maximum Gate-Emitter Voltage: 15V
  • Collector-Emitter saturation Voltage: 1.6V
  • Maximum Collector Current: 0.3A
  • Maximum Operating Junction Temperature: 150
  • Collector Capacitance: 75pF
  • Rise Time: 28
  • Package: TO226AE