MGV12N120D IGBT

MGV12N120D MGV12N120D

MGV12N120D IGBT Datasheet

  • Type of Transistor: IGBT
  • Type Designator: MGV12N120D
  • Type of IGBT Channel: N-Channel
  • Maximum Collector Power Dissipation: 123W
  • Maximum Collector-Emitter Voltage: 1200V
  • Maximum Gate-Emitter Voltage: 20V
  • Collector-Emitter saturation Voltage: 2.5V
  • Maximum Collector Current: 12A
  • Maximum Operating Junction Temperature: 150
  • Package: TO268AA