MGW12N120 IGBT

MGW12N120 MGW12N120

MGW12N120 IGBT Datasheet

  • Type of Transistor: IGBT
  • Type Designator: MGW12N120
  • Type of IGBT Channel: N-Channel
  • Maximum Collector Power Dissipation: 123W
  • Maximum Collector-Emitter Voltage: 1200V
  • Maximum Gate-Emitter Voltage: 20V
  • Collector-Emitter saturation Voltage: 2.51V
  • Maximum Collector Current: 12A
  • Maximum Operating Junction Temperature: 150
  • Collector Capacitance: 930pF
  • Rise Time: 74
  • Package: TO247

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