MGW14N60ED IGBT

MGW14N60ED MGW14N60ED

MGW14N60ED IGBT Datasheet

  • Type of Transistor: IGBT
  • Type Designator: MGW14N60ED
  • Type of IGBT Channel: N-Channel
  • Maximum Collector Power Dissipation: 112W
  • Maximum Collector-Emitter Voltage: 600V
  • Maximum Gate-Emitter Voltage: 20V
  • Collector-Emitter saturation Voltage: 2V
  • Maximum Collector Current: 14A
  • Maximum Operating Junction Temperature: 150
  • Rise Time: 10000
  • Package: TO247

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