MGW30N60 IGBT

MGW30N60 MGW30N60
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MGW30N60 IGBT Datasheet

  • Type of Transistor: IGBT
  • Type Designator: MGW30N60
  • Type of IGBT Channel: N-Channel
  • Maximum Collector Power Dissipation: 202W
  • Maximum Collector-Emitter Voltage: 600V
  • Maximum Gate-Emitter Voltage: 20V
  • Collector-Emitter saturation Voltage: 2.2V
  • Maximum Collector Current: 30A
  • Maximum Operating Junction Temperature: 150
  • Collector Capacitance: 4280pF
  • Rise Time: 76
  • Package: TO247

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