RJP30H2A IGBT

RJP30H2A RJP30H2A
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RJP30H2A IGBT Datasheet

  • Type of Transistor: IGBT
  • Type Designator: RJP30H2A
  • Type of IGBT Channel: N-Channel
  • Maximum Collector Power Dissipation: 60
  • Maximum Collector-Emitter Voltage: 360
  • Maximum Gate-Emitter Voltage: 30
  • Collector-Emitter saturation Voltage: 1.9
  • Maximum Collector Current: 35
  • Maximum Operating Junction Temperature: 150
  • Collector Capacitance: 60
  • Rise Time: 180
  • Package: TO263

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