10N30 MOSFET

10N30 10N30

10N30 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: 10N30
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 300 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Drain Current: 10 A
  • Drain-Source Capacitance: 250 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 89 nS
  • Maximum Drain-Source On-State Resistance: 0.5 Ohm
  • Maximum Power Dissipation: 135 W
  • Package: TO-220_TO-251_TO-252