2N6661JAN MOSFET

2N6661JAN 2N6661JAN
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2N6661JAN MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: 2N6661JAN
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 90 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 2 V
  • Maximum Drain Current: 2 A
  • Drain-Source Capacitance: 50 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Maximum Drain-Source On-State Resistance: 4 Ohm
  • Maximum Power Dissipation: 6.25 W
  • Package: TO39

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