640 MOSFET

640 640
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640 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: 640
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 200 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Drain Current: 18 A
  • Drain-Source Capacitance: 190 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 150 nS
  • Maximum Drain-Source On-State Resistance: 0.18 Ohm
  • Maximum Power Dissipation: 139 W
  • Package: TO220