BUK9E1R6-30E MOSFET

BUK9E1R6-30E BUK9E1R6-30E

BUK9E1R6-30E MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: BUK9E1R6-30E
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 10 V
  • Maximum Gate-Threshold Voltage: 2.1 V
  • Maximum Drain Current: 120 A
  • Drain-Source Capacitance: 1840 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 127 nS
  • Maximum Drain-Source On-State Resistance: 0.0014 Ohm
  • Total Gate Charge: 113 nC
  • Maximum Power Dissipation: 349 W
  • Package: I2PAK