BUK9E1R9-40E MOSFET

BUK9E1R9-40E BUK9E1R9-40E

BUK9E1R9-40E MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: BUK9E1R9-40E
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 40 V
  • Maximum Gate-Source Voltage: 10 V
  • Maximum Gate-Threshold Voltage: 2.1 V
  • Maximum Drain Current: 120 A
  • Drain-Source Capacitance: 1530 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 118 nS
  • Maximum Drain-Source On-State Resistance: 0.0017 Ohm
  • Total Gate Charge: 120 nC
  • Maximum Power Dissipation: 349 W
  • Package: I2PAK