BUK9E3R2-40E MOSFET

BUK9E3R2-40E BUK9E3R2-40E

BUK9E3R2-40E MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: BUK9E3R2-40E
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 40 V
  • Maximum Gate-Source Voltage: 10 V
  • Maximum Gate-Threshold Voltage: 2.1 V
  • Maximum Drain Current: 100 A
  • Drain-Source Capacitance: 875 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 73 nS
  • Maximum Drain-Source On-State Resistance: 0.0028 Ohm
  • Total Gate Charge: 69.5 nC
  • Maximum Power Dissipation: 234 W
  • Package: I2PAK