BUK9E3R7-60E MOSFET

BUK9E3R7-60E BUK9E3R7-60E

BUK9E3R7-60E MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: BUK9E3R7-60E
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 10 V
  • Maximum Gate-Threshold Voltage: 2.1 V
  • Maximum Drain Current: 120 A
  • Drain-Source Capacitance: 822 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 100 nS
  • Maximum Drain-Source On-State Resistance: 0.0034 Ohm
  • Total Gate Charge: 95 nC
  • Maximum Power Dissipation: 293 W
  • Package: I2PAK