BUK9Y6R0-60E MOSFET

BUK9Y6R0-60E BUK9Y6R0-60E

BUK9Y6R0-60E MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: BUK9Y6R0-60E
  • Type of Control Channel: N -Channel
  • SMD Transistor Code: *96E060
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 10 V
  • Maximum Gate-Threshold Voltage: 2.1 V
  • Maximum Drain Current: 100 A
  • Drain-Source Capacitance: 391 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 44 nS
  • Maximum Drain-Source On-State Resistance: 0.0052 Ohm
  • Total Gate Charge: 39.4 nC
  • Maximum Power Dissipation: 195 W
  • Package: LFPAK56_Power-SO8