BUZ100 MOSFET

BUZ100 BUZ100

BUZ100 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: BUZ100
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 50 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 60 A
  • Drain-Source Capacitance: 800 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 100 nS
  • Maximum Drain-Source On-State Resistance: 0.018 Ohm
  • Maximum Power Dissipation: 250 W
  • Package: TO-220AB