BUZ102S MOSFET

BUZ102S BUZ102S

BUZ102S MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: BUZ102S
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 55 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 52 A
  • Drain-Source Capacitance: 410 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 22 nS
  • Maximum Drain-Source On-State Resistance: 0.023 Ohm
  • Total Gate Charge: 45 nC
  • Maximum Power Dissipation: 120 W
  • Package: TO-220AB