BUZ110S MOSFET

BUZ110S BUZ110S

BUZ110S MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: BUZ110S
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 55 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 80 A
  • Drain-Source Capacitance: 745 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 35 nS
  • Maximum Drain-Source On-State Resistance: 0.012 Ohm
  • Total Gate Charge: 85 nC
  • Maximum Power Dissipation: 200 W
  • Package: TO-220AB