BUZ111S MOSFET

BUZ111S BUZ111S

BUZ111S MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: BUZ111S
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 55 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 80 A
  • Drain-Source Capacitance: 1100 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 30 nS
  • Maximum Drain-Source On-State Resistance: 0.008 Ohm
  • Total Gate Charge: 125 nC
  • Maximum Power Dissipation: 300 W
  • Package: P-TO220