BUZ111SL MOSFET

BUZ111SL BUZ111SL

BUZ111SL MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: BUZ111SL
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 55 V
  • Maximum Gate-Source Voltage: 14 V
  • Maximum Gate-Threshold Voltage: 2 V
  • Maximum Drain Current: 80 A
  • Drain-Source Capacitance: 1090 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 37 nS
  • Maximum Drain-Source On-State Resistance: 0.007 Ohm
  • Total Gate Charge: 155 nC
  • Maximum Power Dissipation: 250 W
  • Package: TO-220AB