BUZ339 MOSFET

BUZ339 BUZ339

BUZ339 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: BUZ339
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 500 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 11.5 A
  • Drain-Source Capacitance: 260 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 70 nS
  • Maximum Drain-Source On-State Resistance: 0.5 Ohm
  • Maximum Power Dissipation: 170 W
  • Package: TO-218AA