C2M0160120D MOSFET

C2M0160120D C2M0160120D

C2M0160120D MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: C2M0160120D
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 1200 V
  • Maximum Gate-Source Voltage: 25 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 17.7 A
  • Drain-Source Capacitance: 47 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 12 nS
  • Maximum Drain-Source On-State Resistance: 0.196 Ohm
  • Total Gate Charge: 32.6 nC
  • Maximum Power Dissipation: 125 W
  • Package: TO-247-3

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