C2M1000170D MOSFET

C2M1000170D C2M1000170D

C2M1000170D MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: C2M1000170D
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 1700 V
  • Maximum Gate-Source Voltage: 25 V
  • Maximum Gate-Threshold Voltage: 2.4 V
  • Maximum Drain Current: 4.9 A
  • Drain-Source Capacitance: 12 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 46 nS
  • Maximum Drain-Source On-State Resistance: 1.1 Ohm
  • Total Gate Charge: 13 nC
  • Maximum Power Dissipation: 69 W
  • Package: TO-247-3

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