CAS100H12AM1 MOSFET

CAS100H12AM1 CAS100H12AM1

CAS100H12AM1 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CAS100H12AM1
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 1200 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 3.1 V
  • Maximum Drain Current: 168 A
  • Drain-Source Capacitance: 970 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 76 nS
  • Maximum Drain-Source On-State Resistance: 0.02 Ohm
  • Total Gate Charge: 490 nC
  • Maximum Power Dissipation: 568 W
  • Package: Module